BLF7G27LS-150P NXP Semiconductors, BLF7G27LS-150P Datasheet - Page 8

• Manufacturer Part Number: BLF7G27LS-150P
• Description: 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−20
−40
−60
5M
0
8
6
4
2
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(2)
(1)
(3)
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
(2)
(1)
(3)
80
80
BLF7G27L-150P; BLF7G27LS-150P
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aam997
001aam999
(W)
(W)
Rev. 1 — 12 November 2010
120
120
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
10M
−10
−20
−30
−40
−50
−60
−70
300
200
100
0
0
0
0
V
function of load power; typical values
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
Power LDMOS transistor
(3)
(1)
(2)
80
80
(2)
(1)
(3)
© NXP B.V. 2010. All rights reserved.
P
P
L
L
001aam998
001aan000
(W)
(W)
120
120
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