BLF861A NXP Semiconductors, BLF861A Datasheet - Page 2

• Manufacturer Part Number: BLF861A
• Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
Note
1. Sync compression: input sync
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Feb 09
CW, class-AB
PAL BG (TV); class-AB
V
V
I
P
T
T
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Designed to withstand abrupt load mismatch errors
Source on underside eliminates DC isolators; reducing
common mode inductance
Designed for broadband operation (UHF band)
Internal input and output matching for high gain and
optimum broadband operation.
Communication transmitter applications in the UHF
frequency range.
DS
GS
tot
UHF power LDMOS transistor
MODE OF OPERATION
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source 860 MHz test circuit.
PARAMETER
860 (ch 69)
33%; output sync 27%.
(MHz)
860
f
T
V
mb
(V)
32
32
DS
CONDITIONS
25 C
2
PINNING - SOT540A
(peak sync)
typ. 170
>150
150
(W)
PIN
P
1
2
3
4
5
L
Top view
Fig.1 Simplified outline.
65
typ. 14.5
drain 1
drain 2
gate 1
gate 2
source connected to flange
>13.5
MIN.
(dB)
>14
G
p
3
1
DESCRIPTION
65
18
318
+150
200
15
2
4
MAX.
>50
>40
Product specification
(%)
MBK777
D
5
BLF861A
V
V
A
W
C
C
note 1
UNIT
(dB)
G
1
p