BLF884P NXP Semiconductors, BLF884P Datasheet - Page 5

• Manufacturer Part Number: BLF884P
• Description: A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF884P_BLF884PS
Product data sheet
Fig 2.
(dB)
G
p
24
20
16
12
8
400
P
common source broadband test circuit as described in
Section
DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
L(AV)
= 70 W; V
7.1.1 DVB-T
500
8.
7.1 Broadband RF figures
DS
600
= 50 V; I
IMD
G
p
700
shldr
Dq
= 0.65 A; measured in a
800
All information provided in this document is subject to legal disclaimers.
001aao029
f (MHz)
Rev. 2 — 16 December 2011
900
IMD
-10
-20
-30
-40
-50
(dBc)
shldr
Fig 3.
PAR
(dB)
9.5
8.5
7.5
6.5
5.5
400
P
common source broadband test circuit as described in
Section
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
L(AV)
BLF884P; BLF884PS
= 70 W; V
500
8.
DS
600
UHF power LDMOS transistor
= 50 V; I
PAR
700
η
D
Dq
= 0.65 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
001aao030
f (MHz)
900
50
40
30
20
10
(%)
η
D
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