BLF888A NXP Semiconductors, BLF888A Datasheet - Page 5

• Manufacturer Part Number: BLF888A
• Description: A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF888A_BLF888AS
Product data sheet
Fig 2.
(dB)
G
p
24
20
16
12
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
DS
= 50 V; I
7.1.1 2-Tone
100
7.1 Narrowband RF figures
G
η
D
p
Dq
= 1.3 A; measured in a common source
200
300
400
All information provided in this document is subject to legal disclaimers.
P
001aan761
L(AV)
(W)
500
Rev. 3 — 30 August 2011
60
40
20
0
(%)
η
D
Fig 3.
(dB)
G
p
24
20
16
12
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
DS
BLF888A; BLF888AS
= 50 V; I
100
IMD3
G
p
Dq
= 1.3 A; measured in a common source
200
UHF power LDMOS transistor
300
400
© NXP B.V. 2011. All rights reserved.
P
001aan762
L(AV)
(W)
500
0
-20
-40
-60
IMD3
(dBc)
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