BLF8G24L-200P NXP Semiconductors, BLF8G24L-200P Datasheet - Page 4

200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF8G24L-200P

Manufacturer Part Number
BLF8G24L-200P
Description
200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Package outline
Fig 1.
BLF8G24L-200P_LS-200P
Objective data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
OUTLINE
VERSION
SOT539A
Package outline SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
0.540
13.72
e
BLF8G24L-200P; BLF8G24LS-200P
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
Rev. 1.1 — 20 February 2012
0.375
0.365
9.53
9.27
E 1
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
Power LDMOS transistor
M
0.405
0.395
10.29
10.03
E 1
U 2
c
© NXP B.V. 2012. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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