BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 7

• Manufacturer Part Number: BLL1214-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL1214-250R_1
Product data sheet
Fig 7.
Fig 9.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(dB)
(%)
G
η
13
60
40
20
15
14
12
11
10
D
p
0
1.15
t
typical values
t
Power gain and drain efficiency as function of
frequency; typical values
0
Drain efficiency as a function of load power;
p
p
= 1 ms; δ = 10 %.
= 1 ms; δ = 10 %.
1.25
100
η
G
D
p
1.35
200
(1)
(2)
(3)
f (GHz)
P
L
(W)
mld862
mld864
1.45
Rev. 01 — 4 February 2010
300
60
50
40
30
20
10
(%)
η
D
Fig 8.
Fig 10. Power gain and drain efficiency as function of
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(dB)
(%)
G
η
13
60
40
20
15
14
12
11
10
D
p
0
1.15
0
t
Drain efficiency as a function of load power;
typical values
t
frequency; typical values
p
p
= 100 μs; δ = 10 %.
= 100 μs; δ = 10 %.
LDMOS L-band radar power transistor
1.25
100
BLL1214-250R
(1)
(2)
(3)
G
η
D
p
1.35
200
© NXP B.V. 2010. All rights reserved.
f (GHz)
P
L
(W)
mld863
mld865
1.45
300
60
50
40
30
20
10
(%)
η
D
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