BLS2933-100 NXP Semiconductors, BLS2933-100 Datasheet - Page 7

• Manufacturer Part Number: BLS2933-100
• Description: 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BLS2933-100_1
Product data sheet
Fig 9. Thermal resistance as function of pulse duration and duty cycle; typical values
Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 C
(K/W)
P
(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 5 % duty cycle
(4) 10 % duty cycle
(5) 20 % duty cycle
(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 10 % duty cycle
(4) 20 % duty cycle
(W)
Z
max
th
800
600
400
200
1.0
0.8
0.6
0.4
0.2
0
0
10
10
T
junction temperature
h
5
5
= 70 C
(1)
(2)
(3)
(4)
(5)
10
10
4
4
(1)
(2)
(3)
(4)
Rev. 01 — 1 August 2006
10
10
3
3
Microwave power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
BLS2933-100
t
t
p
p
(s)
(s)
001aaf082
001aaf083
10
10
2
2
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