BLS6G2933P-200 NXP Semiconductors, BLS6G2933P-200 Datasheet - Page 5

200 W LDMOS amplifier pallet intended for radar applications in the 2

BLS6G2933P-200

Manufacturer Part Number
BLS6G2933P-200
Description
200 W LDMOS amplifier pallet intended for radar applications in the 2
Manufacturer
NXP Semiconductors
Datasheet

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8. Test information
BLS6G2933P-200
Objective data sheet
Table 8.
See
Component
C1, C8
C2, C7, C11, C15
C3, C4, C5, C6, C9, C10, C13, C14
C12
C16
R1, R2
Fig 2.
Figure 2
The striplines are on a Rogers RO6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm.
See
Component layout
List of components
for component layout.
Table 8
C5
C6
C3
C4
V
All information provided in this document is subject to legal disclaimers.
GG
for list of components. The drawing is not to scale.
R1
R2
Rev. 01 — 28 May 2010
C2
C7
C1
C8
Description
multilayer ceramic chip capacitor 47 μF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 33 pF
electrolytic capacitor
electrolytic capacitor
SMD resistor
LDMOS S-Band radar pallet amplifier
BLS6G2933P-200
C12
C16
V
DD
Value
680 μF
68 μF
33 Ω
© NXP B.V. 2010. All rights reserved.
001aak230
C11
C10
C9
C13
C14
C15
Remarks
TDK
ATC100B
ATC100A
thin film
5 of 11

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