BLS6G3135S-20 NXP Semiconductors, BLS6G3135S-20 Datasheet - Page 10
BLS6G3135S-20
Manufacturer Part Number
BLS6G3135S-20
Description
20 W LDMOS power transistor intended for radar applications in the 3
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G3135S-20.pdf
(12 pages)
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NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G3135-20_6G3135S-20_3
Product data sheet
Document ID
BLS6G3135-20_6G3135S-20_3 20090303
Modifications:
BLS6G3135-20_6G3135S-20_2 20081217
BLS6G3135-20_6G3135S-20_1 20070307
Revision history
Table 10.
Acronym
LDMOS
RF
S-Band
VSWR
Release date Data sheet status
•
Abbreviations
Section 7.1 on page
BLS6G3135-20; BLS6G3135S-20
Product data sheet
Product data sheet
Objective data sheet -
Rev. 03 — 3 March 2009
Description
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
4: Impedance information added
Change notice Supersedes
-
-
LDMOS S-Band radar power transistor
BLS6G3135-20_6G3135S-20_2
BLS6G3135-20_6G3135S-20_1
-
© NXP B.V. 2009. All rights reserved.
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