BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 5

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS7G2933S-150
Product data sheet
Fig 2.
(W)
P
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
200
160
120
L
80
40
0
0
V
Load power as a function of input power;
typical values
DS
= 32 V; I
7.2 Graphs
Dq
4
= 100 mA; t
p
= 300 μs; δ = 10 %.
8
(5)
(4)
(3)
(2)
(1)
P
All information provided in this document is subject to legal disclaimers.
i
001aan028
(W)
Rev. 2 — 23 February 2011
12
Fig 3.
(dB)
G
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
p
17
15
13
11
9
7
0
V
Power gain as a function of load power; typical
values
DS
= 32 V; I
LDMOS S-band radar power transistor
40
BLS7G2933S-150
Dq
= 100 mA; t
80
(1)
(2)
(3)
(4)
(5)
120
p
= 300 μs; δ = 10 %.
160
© NXP B.V. 2011. All rights reserved.
001aan029
P
L
(W)
200
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