BF1102 NXP Semiconductors, BF1102 Datasheet - Page 8

Enhancement type Field-Effect Transistor in a plastic SOT363 package

BF1102

Manufacturer Part Number
BF1102
Description
Enhancement type Field-Effect Transistor in a plastic SOT363 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2000 Apr 11
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FETs
V
I
Fig.15 Input admittance as a function of frequency;
V
I
Fig.17 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
(mS)
|y fs |
= 15 mA; T
= 15 mA; T
10
y is
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
|y fs |
b is
g is
ϕ fs
f (MHz)
f (MHz)
MGS370
MGS372
10
10
3
10
10
1
3
(deg)
− ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
I
Fig.16 Reverse transfer admittance and phase as
V
I
Fig.18 Output admittance as a function of
D
D
DS
DS
(mS)
= 15 mA; T
= 15 mA; T
(mS)
10
y rs
y os
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
BF1102; BF1102R
10
10
2
2
ϕ rs
b os
y rs
g os
f (MHz)
Product specification
f (MHz)
MCD971
MCD970
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2

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