BF1118W NXP Semiconductors, BF1118W Datasheet - Page 10
BF1118W
Manufacturer Part Number
BF1118W
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet
1.BF1118.pdf
(13 pages)
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BF1118_1118R_1118W_1118WR
Product data sheet
Document ID
BF1118_1118R_1118W_1118WR v.2
Modifications:
BF1118_1118R_1118W_1118WR v.1
Revision history
Table 9.
Acronym
AQL
MOSFET
RF
S4
VCR
Abbreviations
Release date
20120111
20100629
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Description
Acceptable Quality Level
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
Special inspection level 4
Video Cassette Recorder
Figure
Rev. 2 — 11 January 2012
3: changed left-side output to input
Data sheet status
Product data sheet
Product data sheet
BF1118(R); BF1118W(R)
Change notice Supersedes
-
-
BF1118_1118R_1118W_
1118WR v.1
-
Silicon RF switches
© NXP B.V. 2012. All rights reserved.
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