BF1201WR NXP Semiconductors, BF1201WR Datasheet - Page 9

• Manufacturer Part Number: BF1201WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2000 Mar 29
handbook, full pagewidth
(MHz)
1000
100
200
300
400
500
600
700
800
900
N-channel dual-gate PoLo MOS-FETs
50
f
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.987
0.985
0.978
0.976
0.949
0.928
0.905
0.882
0.860
0.838
0.818
s
11
DS
= 5 V; V
ANGLE
18.59
27.74
36.59
45.08
53.26
61.07
68.48
75.55
82.23
R GEN
4.72
9.39
(deg)
50 Ω
V I
G2-S
DS
50 Ω
(dB)
F
= 5 V; V
MAGNITUDE
1.9
min
R2
1
= 4 V; I
Fig.21 Cross-modulation test set-up.
(ratio)
2.775
2.774
2.731
2.671
2.599
2.501
2.400
2.297
2.199
2.096
1.997
4.7 nF
C2
G2-S
D
= 15 mA; T
s
V GG
21
10 kΩ
= 4 V; I
R G1
R1
V AGC
ANGLE
(deg)
174.6
169.5
159.1
148.8
138.8
129.1
119.8
110.9
102.4
94.2
86.3
4.7 nF
D
C1
9
amb
= 15 mA; T
(ratio)
0.825
0.753
= 25 C
MAGNITUDE
DUT
BF1201; BF1201R; BF1201WR
0.0006
0.0010
0.0019
0.0026
0.0032
0.0035
0.0035
0.0033
0.0029
0.0024
0.0021
(ratio)

amb
V DS
opt
L1
≈
= 25 C
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
(deg)
38.93
70.65
ANGLE
103.8
(deg)
MGS315
88.8
86.7
79.7
74.2
69.9
65.9
64.6
65.7
69.1
83.3
R L
50 Ω
MAGNITUDE
(ratio)
0.997
0.997
0.996
0.994
0.992
0.989
0.986
0.982
0.979
0.975
0.971
Product specification
38.75
s
()
R
50
22
n
ANGLE
10.02
13.33
16.55
19.64
22.63
25.54
28.44
31.42
(deg)
1.84
3.37
6.72