BF1202 NXP Semiconductors, BF1202 Datasheet - Page 8

Enhancement type Field-Effect Transistor in a plastic SOT143B package

BF1202

Manufacturer Part Number
BF1202
Description
Enhancement type Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF1202
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BF1202
Manufacturer:
PHILIPS
Quantity:
6 161
Part Number:
BF1202R
Manufacturer:
NXP
Quantity:
146 000
Part Number:
BF1202R
Manufacturer:
PHI
Quantity:
20 000
Part Number:
BF1202WR
Manufacturer:
NXP
Quantity:
120 000
Part Number:
BF1202WR
Manufacturer:
PHILIPS
Quantity:
12 458
Part Number:
BF1202WR
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
= 12 mA; T
= 12 mA; T
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
y fs
ϕ fs
b is
f (GHz)
f (MHz)
g is
MCD964
MCD966
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
V
I
Fig.20 Output admittance as a function of
D
D
DS
DS
= 12 mA; T
(mS)
= 12 mA; T
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
BF1202; BF1202R; BF1202WR
−1
−2
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
ϕ rs
g os
y rs
f (MHz)
f (MHz)
Product specification
MCD965
MCD967
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2

Related parts for BF1202