BF1214 NXP Semiconductors, BF1214 Datasheet - Page 18

Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins

BF1214

Manufacturer Part Number
BF1214
Description
Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
8.2.1
8.2.2
8.3
8.3.1
8.3.2
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . 14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Graphs for amplifier A and B . . . . . . . . . . . . . . 6
Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 9
Scattering parameters for amplifier A . . . . . . . 11
Noise data for amplifier A . . . . . . . . . . . . . . . . 11
Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier B . . . . . . . 14
Noise data for amplifier B . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Dual N-channel dual gate MOSFET
Date of release: 30 October 2007
Document identifier: BF1214_1
BF1214
All rights reserved.

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