BF998 NXP Semiconductors, BF998 Datasheet
BF998
Available stocks
Related parts for BF998
BF998 Summary of contents
Page 1
... DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 DISCRETE SEMICONDUCTORS 1996 Aug 01 ...
Page 2
... BF998; BF998R Top view MAM039 Fig.1 Simplified outline (SOT143B) and symbol; BF998 Top view MAM040 Fig.2 Simplified outline (SOT143R) and symbol; BF998R. TYP. MAX. 12 30 200 24 2.1 25 1 150 ...
Page 3
... D I gate 1 current G1 I gate 2 current G2 P total power dissipation; BF998 tot P total power dissipation; BF998R tot T storage temperature stg T operating junction temperature j Notes 1. Device mounted on a ceramic substrate 0.7 mm. 2. Device mounted on a printed-circuit board. handbook, halfpage ...
Page 4
... THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient in free air; BF998 th j-a R thermal resistance from junction to ambient in free air; BF998R note 1 th j-a Notes 1. Device mounted on a ceramic substrate 0.7 mm. 2. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS = 25 C; unless otherwise specified. ...
Page 5
... V 0 −0.1 V −0.2 V −0.3 V −0.4 V −0 (V) MGE814 handbook, halfpage max typ min −400 0 400 V G1 (mV) 5 BF998; BF998R (mA − amb Fig.6 Transfer characteristics; typical values (mS) ...
Page 6
... Aug 01 MGE812 handbook, halfpage V G2 (V) V MGE809 handbook, halfpage 0 0.8 V G1-S ( BF998; BF998R 1 (pF) 1.4 1.3 1.2 1.1 1 MHz; T G2-S amb Fig.10 Output capacitance as a function of drain-source voltage; typical values. 2.4 ...
Page 7
... Aug 01 MGC466 (MHz C. MGC468 2 10 ϕ fs (deg (MHz C. 7 BF998; BF998R (μS) ϕ mA G2-S D amb Fig.14 Reverse transfer admittance and phase as a function of frequency ...
Page 8
... 330 kΩ BB405 100 kΩ tun input = 0.5 mS. C1 adjusted for G L Fig.17 Gain control test circuit 200 MHz. 8 Product specification BF998; BF998R μ μ Ω 1.8 kΩ output 360 Ω 330 kΩ ...
Page 9
... Aug 01 V agc 1 nF 140 kΩ 270 kΩ 0.5 to 3.5 pF 1.8 kΩ Fig.18 Gain control test circuit 800 MHz. 9 BF998; BF998R 0 3.5 pF 360 Ω Product specification 50 Ω output ...
Page 10
... 200 MHz amb Fig.19 Automatic gain control characteristics measured in circuit of Fig.17. 1996 Aug 01 MGE808 handbook, halfpage agc ( BF998; BF998R 0 ΔG tr (dB) I DSS = −10 max typ min −20 −30 −40 − C. ...
Page 11
... VERSION IEC SOT143B 1996 Aug scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA 11 Product specification BF998; BF998R detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 04-11-16 06-03-16 ...
Page 12
... SOT143R 1996 Aug scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA 12 Product specification BF998; BF998R detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 ...
Page 13
... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 13 Product specification BF998; BF998R DEFINITION ...
Page 14
... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 14 Product specification BF998; BF998R ...
Page 15
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...