STTH2R02-Y STMicroelectronics, STTH2R02-Y Datasheet - Page 3

• Manufacturer Part Number: STTH2R02-Y
• Description: Automotive Ultrafast recovery diode
• Manufacturer: STMicroelectronics

STTH2R02-Y
Table 5.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
100
50
40
30
20
10
80
60
40
20
0
0
0.0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
P = 5 W
P = 5 W
Dynamic characteristics
Peak current versus duty cycle
Forward voltage drop versus
forward current (maximum values)
0.5
0.2
P = 2 W
P = 2 W
0.3
Parameter
1.0
P = 1 W
P = 1 W
0.4
T
j
=150°C
0.5
1.5
0.6
T
j
=25°C
0.7
I
I
M
M
δ
d
=tp/T
=tp/T
2.0
0.8
T
T
V
0.9
FM
I
V
I
V
I
V
I
V
I
T
δ
F
F
F
F
F
(V)
Doc ID 17934 Rev 1
j
tp
tp
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 2 A, dI
= 2 A, dI
= 2 A, dI
= 25 °C
= 30 V, T
= 30 V, T
= 160 V, T
1.0
2.5
= 1.1 x V
Test conditions
F
F
F
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = 100 A/µs
/dt = 100 A/µs,
j
j
= 25 °C
= 25 °C
Fmax
j
= 125 °C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
1.E-02
0
, T
0.0
Single pulse
j
S
= 25 °C
cu
SMA
=1cm²
1.E-01
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance junction to case versus
pulse duration
0.5
T
j
=150°C
1.E+00
1.0
Min.
T
-
-
-
-
-
j
1.E+01
=25°C
1.5
Typ
2.0
23
15
40
3
Characteristics
1.E+02
2.0
Max.
30
20
4
-
-
t
P
V
(ms)
FM
(V)
1.E+03
2.5
Unit
ns
ns
A
V
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