STTH2R02-Y STMicroelectronics, STTH2R02-Y Datasheet - Page 4

• Manufacturer Part Number: STTH2R02-Y
• Description: Automotive Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Characteristics
4/8
Figure 5.
Figure 7.
Figure 9.
100
60
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
1
10
25
1
V
R
I
F
=160V
=2A
Junction capacitance versus
reverse applied voltage
(typical values)
Reverse recovery time versus dI
(typical values)
Dynamic parameters versus
junction temperature
50
I
RM
10
Q
RR
75
100
T
T
j
j
=125°C
=25°C
100
100
125
V
dI
osc
F=1MHz
F
T
T
=30mV
/dt(A/µs)
j
=25°C
V
j
(°C)
V
R
I
R
F
=160V
(V)
=2A
RMS
Doc ID 17934 Rev 1
1000
1000
150
F
/dt
Figure 6.
Figure 8.
Figure 10. Thermal resistance, junction to
120
100
60
50
40
30
20
10
6
5
4
3
2
1
0
80
60
40
20
0
10
0
10
0.0
V
R
V
I
F
=160V
R
=2A
0.5
I
F
=160V
=2A
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
ambient, versus copper surface
under each lead
1.0
F
/dt (typical values)
1.5
Epoxy printed circuit board,
copper thickness = 35 µm
2.0
F
/dt (typical values)
100
100
2.5
T
T
j
T
=125°C
j
=125°C
j
=25°C
3.0
T
j
=25°C
3.5
4.0
dI
STTH2R02-Y
dI
F
F
/dt(A/µs)
/dt(A/µs)
S
CU
(cm²)
4.5
1000
1000
5.0