STPS30M80C STMicroelectronics, STPS30M80C Datasheet - Page 2

• Manufacturer Part Number: STPS30M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30M80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Characteristics
1
2/11
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
2. See
3.
Table 3.
When the two diodes 1 and 2 are used simultaneously:
ΔT
Symbol
Symbol
V
P
I
R
V
F(RMS)
I
R
ARM
ARM
I
j
F(AV)
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
(diode 1) = P(diode 1) x R
FSM
th(j-c)
RRM
T
th(c)
dPtot
dTj
j
(1)
(2)
Figure 13
<
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ = 0.5
Surge non repetitive
forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum operating junction temperature
Junction to case
Coupling
Rth(j-a)
1
Absolute ratings (limiting values, per diode, at T
otherwise specified)
Thermal parameters
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
Doc ID 018722 Rev 1
(Per diode) + P(diode 2) x R
Parameter
TO-220AB,
I
TO-220FPAB T
t
t
Parameter
2
p
p
PAK, D
= 10 ms sinusoidal
< 1 µs, T
TO-220AB
I
TO-220FPAB
TO-220AB
I
TO-220FPAB
2
2
PAK, D
PAK, D
2
PAK
j
< 150 °C, I
(3)
2
2
T
T
T
PAK
PAK
c
c
c
j
= 25 °C, t
= 155 °C
= 150 °C
= 110 °C Per diode
AR
per diode
total
per diode
total
< 28.2 A
p
= 1 µs
th(c)
Per diode
Per device
T
c
amb
= 25 °C
= 25 °C unless
Value
1.60
0.88
5.20
4.15
0.15
3.10
Value
9500
220
100
175
STPS30M80C
80
30
15
30
15
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
V