STPS30M80C STMicroelectronics, STPS30M80C Datasheet - Page 3

• Manufacturer Part Number: STPS30M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30M80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

STPS30M80C
Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
0.01
14
12
10
0.1
8
6
4
2
0
V
I
1
0.01
R
0
F
P
(1)
(2)
P
F(AV)
P
ARM
ARM
(W)
2
(1µs)
(t p )
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.455 x I
4
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
δ = 0.05 δ = 0.1
6
Parameter
8
1
F(AV)
10
δ = 0.2
δ = t / T
+ 0.0113 x I
12
10
p
T
14
T
T
T
T
T
T
T
T
t
j
j
j
j
j
j
j
j
p
δ = 0.5
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
16
100
Doc ID 018722 Rev 1
Test conditions
F
2
I
F(AV)
18
(RMS)
δ = 1
t (µs)
p
(A)
1000
20
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 7.5 A
= 15 A
= 30 A
= 80 V
1
0
18
16
14
12
10
25
8
6
4
2
0
P
0
I
ARM
P
F(AV)
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
TO-220AB / I PAK / D PAK
R th(j-a) = R th(j-c)
75
75
T
amb
0.570
0.490
0.675
0.575
0.815
0.680
Typ.
TO-220FPAB
(°C)
8
7
2
100
100
2
0.620
0.530
0.745
0.625
0.910
0.795
Max.
125
Characteristics
40
25
125
150
Unit
mA
µA
T (°C)
V
j
175
3/11
150