STPS61170C STMicroelectronics, STPS61170C Datasheet - Page 2

• Manufacturer Part Number: STPS61170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
1. Refer to
2.
Table 3.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation :
P = 0.54 x I
2/7
Symbol
Symbol
Symbol
V
V
I
R
T
V
F(RMS)
R
P
V
I
dV/dt
ARM
ASM
I
I
F(AV)
T
th (j-c)
j
R
FSM
ARM
(diode 1) = P(diode1) x R
RRM
th (c)
F
T
dPtot
stg
dTj
(1)
j
(2)
(1)
(1)
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak avalanche voltage
Maximum single pulse peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Critical rate of rise reverse voltage
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
Figure 11
Rth(j-a)
F(AV)
1
p
p
Characteristics
Absolute ratings (limiting values, per diode)
Thermal resistance parameters
Static electrical characteristics (per diode)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0043 I
Parameter
F
2
th(j-c)
(RMS)
(Per diode) + P(diode 2) x R
Parameter
Parameter
Doc ID 11643 Rev 2
T
T
T
T
T
T
j
j
j
j
j
j
= 125 °C
(2)
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
T
Tests conditions
C
= 150 °C δ = 0.5
V
I
I
F
F
R
= 30 A
= 60 A
= V
th(c)
t
t
t
I
p
p
p
AR
RRM
= 10 ms sinusoidal
= 1 µs T
= 1 µs, T
< 47 A
Per diode
Per device
Per diode
Total
Min.
j
j
= 25 °C
< 150 °C,
Typ.
0.63
0.76
16
-65 to + 175
31800
10000
Value
Value
170
500
200
175
0.9
0.6
0.3
80
30
60
Max.
0.84
0.67
0.92
0.80
60
60
STPS61170C
°C/W
Unit
V/µs
Unit
Unit
mA
µA
W
°C
°C
V
A
A
A
V
V