STPS61170C STMicroelectronics, STPS61170C Datasheet - Page 3

• Manufacturer Part Number: STPS61170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS61170C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
1
0.01
400
350
300
250
200
150
100
30
25
20
15
10
50
5
0
0.001
1.E-03
0
0.01
P
0
0.1
P
ARM
0.01
1
ARM
P
I
P
(1µs)
M
ARM
(t p )
ARM p
5
(1µs)
(t )
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
d
=0.5
t
0.1
10
1.E-02
d=0.05
15
1
1
I
t (µs)
F(AV)
p
t(s)
d=0.1
20
(A)
10
25
10
1.E-01
d=0.2
30
100
d
=t /T
p
d=0.5
100
T
T
T
C
35
C
=125°C
C
T
=50°C
=75°C
Doc ID 11643 Rev 2
1000
1.E+00
t
p
d=1
t (µs)
p
40
1000
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
Figure 6.
1
0
25
P
1.2
0.8
0.6
0.4
0.2
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
ARM
5
0
P
1
0
1.E-03
25
0
ARM
P
(25 °C)
P
ARM
d=0.2
d=0.1
d=0.5
d
(T )
ARM p
Single pulse
=t /T
j
p
(25°C)
(t )
25
50
T
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
50
t
p
50
1.E-02
75
75
R
R
th(j-a)
th(j-a)
75
=R
=15°C/W
th(j-c)
t
T (°C)
P
(s)
j
T
amb
100
100
(°C)
100
1.E-01
125
Characteristics
d
=t /T
125
p
125
150
T
t
p
1.E+00
T (°C)
150
175
j
3/7
150