TMBYV10-60 STMicroelectronics, TMBYV10-60 Datasheet - Page 2

• Manufacturer Part Number: TMBYV10-60
• Description: Small Signal Schottky Diode
• Manufacturer: STMicroelectronics

TMBYV 10-60
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
* Pulse test: t
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
2/5
Symbol
Symbol
V
I
C
R
F
*
*
p
300 s
T
T
I
I
T
T
F
F
j
j
j
j
= 1A
= 3A
= 25 C
= 100 C
= 25 C
= 25 C
2%.
Test Conditions
Test Conditions
V
T
V
V
j
R
R
R
= 25 C
= V
= 0
= 5V
RRM
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Min.
Min.
Typ.
Typ.
150
40
Max.
Max.
0.5
0.7
10
1
Unit
Unit
mA
pF
V