STTH312 STMicroelectronics, STTH312 Datasheet - Page 4

• Manufacturer Part Number: STTH312
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/8
Figure 5.
Figure 7.
Figure 9.
400
350
300
250
200
150
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
55
50
45
40
35
30
25
20
15
10
50
5
0
0
0
V
0
S factor
0
t (ns)
FP
rr
I =I
T =125°C
F
j
F(AV)
(V)
25
50
50
50
100
Reverse recovery time versus
dI
100
Softness factor versus
dI
Transient peak forward voltage
versus dI
I =2 x I
F
75
F
F
/dt (typical values)
/dt (typical values)
150
F(AV)
150
100
I =I
F
200
200
F(AV)
125
dI /dt(A/µs)
dI /dt(A/µs)
dI /dt(A/µs)
F
F
F
F
/dt (typical values)
150
250
250
I =0.5 x I
F
175
300
300
F(AV)
200
350
350
225
400
400
250
I
V =600V
T =125°C
F
R
j
V =600V
T =125°C
450
450
≤
j
R
275
2xI
F(AV)
500
500
300
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
1200
1000
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
700
600
500
400
300
200
100
800
600
400
200
0
0
25
0
t (ns)
0
Q (nC)
fr
rr
V =600V
T =125°C
R
j
50
Q
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
(typical values)
100
RR
100
F
I
RM
50
/dt (typical values)
S factor
150
t
rr
200
200
dI /dt(A/µs)
dI /dt(A/µs)
I =0.5 x I
F
F
I =2 x I
F
F
T (°C)
I =I
F
j
250
75
F(AV)
F(AV)
F(AV)
300
300
350
100
Reference: T =125°C
400
400
V =1.5 x V max.
FR
T =125°C
V =600V
I =I
I =I
F
F
j
R
STTH312
F(AV)
F(AV)
450
j
F
F
500
500
125
/dt