STTH512 STMicroelectronics, STTH512 Datasheet - Page 3

• Manufacturer Part Number: STTH512
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Specifications of STTH512

• Insulated Package: TO-220FPAC

STTH512
Table 4.
Figure 1.
Figure 3.
Figure 5.
V
13
12
11
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
9
8
7
6
5
4
3
2
1
0
t
1.E-03
S
FP
fr
0.0
P(W)
Z
th(j-c)
Single pulse
TO-220AC
DPAK
0.5
Softness factor
Forward recovery time
Forward recovery voltage
/R
1.0
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
Peak reverse recovery current
versus dI
δ = 0.05
1.5
1.E-02
2.0
δ = 0.1
2.5
F
I
F(AV)
/dt (typical values)
t (s)
p
3.0
(A)
δ = 0.2
3.5
1.E-01
4.0
δ = 0.5
4.5
δ
=tp/T
5.0
δ = 1
I
V
I
V
I
T
F
F
F
j
T
R
FR
5.5
= 5 A, dI
= 5 A
= 5 A, dI
= 25° C
= 600 V, T
1.E+00
tp
= 1.5 x V
6.0
F
F
dI
Figure 2.
Figure 4.
Figure 6.
/dt = -200 A/µs,
/dt = 50 A/µs,
F
Fmax
j
/dt = 50 A/µs
= 125° C
50
45
40
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
0
1.E-03
0.0
I
Z
FM
, T
th(j-c)
Single pulse
TO-220FPAC
(A)
j
0.5
= 25° C
/R
th(j-c)
forward current
impedance junction to case versus
pulse duration
Reverse recovery time versus dI
(typical values)
Forward voltage drop versus
1.0
Relative variation of thermal
(maximum values)
1.E-02
T =150°C
j
1.5
(typical values)
T =150°C
j
2.0
t (s)
1.E-01
p
V
2.5
FM
(V)
3.0
9.5
2
(maximum values)
3.5
1.E+00
Characteristics
T =25°C
j
4.0
400
4.5
1.E+01
F
ns
V
5.0
3/10
/dt