STTH512 STMicroelectronics, STTH512 Datasheet - Page 4

• Manufacturer Part Number: STTH512
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Specifications of STTH512

• Insulated Package: TO-220FPAC

Characteristics
4/10
Figure 7.
Figure 9.
2000
1800
1600
1400
1200
1000
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
28
26
24
22
20
18
16
14
12
10
800
600
400
200
8
6
4
2
0
0
0
I
25
RM
0
V =600V
T =125°C
Q (nC)
R
j
rr
V =600V
T =125°C
(A)
R
j
100
Reverse recovery charges
versus dI
Relative variations of dynamic
parameters versus junction
temperature
I
Q
RM
100
I =0.5 x I
RR
F
50
S factor
F(AV)
t
rr
I =I
F
200
F(AV)
200
dI /dt(A/µs)
dI /dt(A/µs)
F
F
/dt (typical values)
F
T (°C)
j
75
I =2 x I
I =0.5 x I
F
F
I =2 x I
F
I =I
F
300
F(AV)
300
F(AV)
F(AV)
F(AV)
100
Reference: T =125°C
400
400
V =600V
I =I
F
R
F(AV)
j
500
500
125
Figure 8.
Figure 10. Transient peak forward voltage
600
550
500
450
400
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
45
40
35
30
25
20
15
10
50
5
0
0
0
0
V
S factor
0
t (ns)
FP
rr
I =I
T =125°C
F
j
(V)
F(AV)
50
(typical values)
versus dI
Softness factor versus dI
100
100
I =2 x I
F
100
F(AV)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
dI /dt(A/µs)
F
F
/dt (typical values)
F
F
I =I
F
F(AV)
150
I =0.5 x I
F
300
300
200
F(AV)
400
400
F
250
/dt
STTH512
I
V =600V
T =125°C
F
V =600V
T =125°C
R
j
≤
j
R
2xI
F(AV)
500
500
300