STM8L151G4 STMicroelectronics, STM8L151G4 Datasheet - Page 109
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STM8L151G4
Manufacturer Part Number
STM8L151G4
Description
8-bit ultra-low-power MCU, up to 32 KB Flash, 1 KB Data EEPROM
Manufacturer
STMicroelectronics
Datasheet
1.STM8L151G4.pdf
(126 pages)
Specifications of STM8L151G4
Temp. Range
- 40 °C to 85, 105 or 125 °C
5 Low Power Modes
Wait, Low power run (5.1 μA), Low power wait (3 μA), Active-halt with full RTC (1.3 μA), Halt (350 nA)
Consumption
195 μA/MHz+440μA
Ultralow Leakage Per I/0
50 nA
Fast Wakeup From Halt
4.7 μs
Lcd
up to 4x28 segments w/ step-up converter
4 Channels; Supported Peripherals
ADC, DAC, SPI, I2C, USART, timers
2 Watchdogs
1 Window, 1 Independent
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STM8L151xx, STM8L152xx
Table 59.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 60.
1. Data based on characterization results, not tested in production.
Static latch-up
Table 61.
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Symbol
LU
Peak level
EMI data
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Parameter
Static latch-up class
(1)
Ratings
V
T
LQFP32
conforming to
IEC61967-2
A
DD
Doc ID 15962 Rev 9
+25 °C,
Conditions
3.6 V,
Parameter
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
T
A
+25 °C
Electrical parameters
Max vs.
16 MHz
Maximum
value
-3
2000
9
4
2
Class
500
II
(1)
109/126
dB V
Unit
Unit
V
-