STM8AF6246 STMicroelectronics, STM8AF6246 Datasheet - Page 13

• Manufacturer Part Number: STM8AF6246
• Description: STM8AF62 Standard Line
• Manufacturer: STMicroelectronics

Specifications of STM8AF6246

• Max Fcpu: 16 MHz
• Flash Program Memory: 16 to 32 Kbytes Flash; data retention 20 years at 55 °C after 1 kcycle
• Data Memory: 0.5 to 1 Kbyte true data EEPROM; endurance 300 kcycles
• Ram: 1 to 2 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8AF61xx, STM8AF62xx
5.2
5.2.1
5.2.2
5.3
5.4
5.4.1
Single wire interface module (SWIM) and debug module (DM)
SWIM
The single wire interface module, SWIM, together with an integrated debug module, permits
non-intrusive, real-time in-circuit debugging and fast memory programming. The interface
can be activated in all device operation modes and can be connected to a running device
(hot plugging).The maximum data transmission speed is 145 bytes/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-flavored
emulator. Besides memory and peripheral operation, CPU operation can also be monitored
in real-time by means of shadow registers.
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Interrupt controller
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Flash program and data EEPROM
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Architecture
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R/W of RAM and peripheral registers in real-time
R/W for all resources when the application is stopped
Breakpoints on all program-memory instructions (software breakpoints), except the
interrupt vector table
Two advanced breakpoints and 23 predefined breakpoint configurations
Nested interrupts with three software priority levels
21 interrupt vectors with hardware priority
Five vectors for external interrupts (up to 34 depending on the package)
Trap and reset interrupts
8 Kbytes to 32 Kbytes of medium density single voltage program Flash memory
Up to 1 Kbytes true (not emulated) data EEPROM
Read while write: writing in the data memory is possible while executing code in the
Flash program memory
Temporary memory unprotection (TMU)
section Readout protection of RM0016
contact your local ST Sales Office.The device setup is stored in a user option area in
the non-volatile memory
The memory is organized in blocks of 128 bytes each
Read granularity: 1 word = 4 bytes
Write/erase granularity: 1 word (4 bytes) or 1 block (128 bytes) in parallel
Writing, erasing, word and block management is handled automatically by the memory
interface.
Doc ID 14952 Rev 5
Product overview
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