T3050H STMicroelectronics, T3050H Datasheet - Page 2

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T3050H

Manufacturer Part Number
T3050H
Description
High-temperature 30A Triacs
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
2/9
Characteristics
Table 2.
Table 3.
1. Minimum I
2. For both polarities of A2 referenced to A1.
Symbol
Symbol
dV/dt
I
(dI/dt)c
P
V
I
T(RMS)
V
GT
I
I
dI/dt
V
V
T
I
G(AV)
H
TSM
DSM
RSM
GM
(2)
I
T
I
GD
stg
GT
²
L
(2)
t
j
(1)
(2)
/
On-state rms current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak
off-state volt-age
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
V
I
I
V
Without snubber
²
G
T
G
t Value for fusing
D
D
D
GT
= 500 mA
= 2 x I
= 1.2 I
Absolute maximum rating
Electrical characteristics (T
= 12 V R
= V
= 67 %V
is guaranted at 20 % of I
DRM
GT
GT
Test conditions
, t
DRM
R
L
r
L
≤ 100 ns
= 33 Ω
= 3.3 kΩ
gate open
j
initial = 25 °C)
Doc ID 17029 Rev 4
GT
Parameter
max.
j
= 25 °C, unless otherwise specified)
TO-220AB
TO-220AB
insul.
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
T
T
p
p
p
Quadrant
j
j
I - II - III
I - II - III
I - II - III
= 10 ms
= 10 µs
= 20 µs
= 150 °C
= 150 °C
I - III
II
T
T
t = 20 ms
t = 16.7 ms
T
T
T
T
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
c
c
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 121 °C
= 92 °C
T3035H T3050H
1000
35
60
90
75
33
V
-40 to +150
-40 to +150
Value
0.15
DSM
1.0
Value
+100
T3035H T3050H
270
284
487
30
50
4
1
/V
1500
110
50
75
90
44
RSM
A/ms
Unit
A/µs
Unit
V/µs
A
mA
mA
mA
°C
W
A
A
V
A
V
V
²
s

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