T3050H STMicroelectronics, T3050H Datasheet - Page 5

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T3050H

Manufacturer Part Number
T3050H
Description
High-temperature 30A Triacs
Manufacturer
STMicroelectronics
Datasheet

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T3035H T3050H
Figure 13. Acceptable junction to ambient thermal resistance vs repetitive peak off-state voltage
Figure 9.
Figure 11. Relative variation of static dV/dt
11
10
9
8
7
6
5
4
3
2
1
0
1000
1000
100
100
25
10
10
dV/dt[T ]/dV/dt[T = 150 °C]
1
1
0
0
I (A)
T = 150 °C
TM
j
j
50
and ambient temperature
On state characteristics
(maximum values)
immunity vs junction temperature
1
1
T = 25 °C
j
j
75
2
2
65
60
55
50
45
40
35
30
25
20
15
10
5
0
20
100
R
voltage and ambient temperature
3
3
th(j-a)
30
V
(°C/W)
V
DRM
DRM
= V
40
= V
V = V = 400 V
D
125
RRM
RRM
4
R = 15 m
V = 0.85 V
50
= 600 V
= 400 V
to
d
T max:
R
J
Doc ID 17029 Rev 4
V (V)
60
T (°C)
TM
j
Ω
150
70
5
Ta(°C)
V
80
DRM
Figure 10. Relative variation of critical rate of
Figure 12. Relative variation of leakage
1.0E+00
11
10
1.0E-01
1.0E-02
1.0E-03
1.0E-04
= V
9
8
7
6
5
4
3
2
1
0
25
90
(dI/dt) [T ]/(dI/dt) [T = 150 °C]
RRM
= 200 V
25
100
I
DRM RRM
C
[T = 150 °C; 600 V]
V
DRM
j
j
/I
110
V
= V
DRM
50
decrease of main current vs
junction temeprature
current vs junction temperature for
different values of blocking voltage
[T ;V
RRM
= V
120
j
50
C
= 200 V
RRM
V
DRM
DRM
130
j
= 400 V
/V
= V
RRM
75
140
RRM
]/I
75
= 600 V
DRM RRM
/I
100
100
Characteristics
125
125
T (°C)
j
T (°C)
j
150
150
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