STB12NM50 STMicroelectronics, STB12NM50 Datasheet - Page 3

• Manufacturer Part Number: STB12NM50
• Description: N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
• Manufacturer: STMicroelectronics

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
I
SD
P
V
DM
R
V
thj-case
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
stg
D
D
AS
AS
≤ 12A, di/dt ≤ 400A/µs, V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Insulation winthstand voltage (DC)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
(BR)DSS
= 25°C
Parameter
C
C
=100°C
= 25°C
TO-220/D²PAK/
/D²PAK/I²PAK
TO-220-
I² PAK
1.28
0.78
160
7.5
12
48
--
-65 to 150
Value
Value
± 30
62.5
300
15
Value
400
Electrical ratings
6
TO-220FP
TO-220FP
7.5
2500
12
48
0.28
3.57
35
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
A
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