STB12NM50 STMicroelectronics, STB12NM50 Datasheet - Page 5

• Manufacturer Part Number: STB12NM50
• Description: N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
• Manufacturer: STMicroelectronics

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 16)
I
di/dt = 100A/µs,
V
(see Figure 16)
SD
SD
SD
DD
DD
=12A, V
=12A,
=12A,
Test conditions
=100V, Tj=25°C
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
2.23
16.5
270
340
18
3
Max
1.5
11
48
Unit
µC
µC
ns
ns
A
A
V
A
A
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