STQ1NK60ZR STMicroelectronics, STQ1NK60ZR Datasheet - Page 3

• Manufacturer Part Number: STQ1NK60ZR
• Description: N-CHANNEL 600V - 13 Ohm - 0.8A Zener-Protected SuperMESH™ PowerMOSFET
• Manufacturer: STMicroelectronics

STQ1NK60ZR-AP, STN1NK60Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
Table 4.
V
Symbol
Symbol
dv/dt
Symbol
R
ESD(G-D)
I
SD
P
DM
R
V
V
T
thj-lead
E
T
I
I
I
TOT
thj-a
DS
GS
stg
T
AR
D
D
AS
J
(1)
≤ 0.3 A, di/dt ≤ 200 A/µs, V
l
(2)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-ambient max
Thermal resistance junction-lead max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
Parameter
DD
Parameter
Parameter
Doc ID 9509 Rev 12
= 80%V
C
D
= 25 °C
GS
= I
AR
= 0)
(BR)DSS
, V
C
C
=100 °C
DD
= 25 °C
= 50 V)
TO-92
TO-92
0.25
0.3
120
40
3
- 55 to 150
Value
0.189
Value
Value
± 30
600
800
260
1.2
4.5
0.8
60
SOT-223
SOT-223
0.26
38
Electrical ratings
0.3
3.3
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
A
V
V
A
A
A
V
3/16