STQ1NK60ZR STMicroelectronics, STQ1NK60ZR Datasheet - Page 5

• Manufacturer Part Number: STQ1NK60ZR
• Description: N-CHANNEL 600V - 13 Ohm - 0.8A Zener-Protected SuperMESH™ PowerMOSFET
• Manufacturer: STMicroelectronics

STQ1NK60ZR-AP, STN1NK60Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 9.
1.
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
d(on)
d(off)
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
SD
I
Q
Q
t
SD
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 9509 Rev 12
V
R
(see Figure 18)
I
I
di/dt = 100 A/µs,
V
I
di/dt = 100 A/µs,
V
Igs= ± 1 mA (open drain)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 0.8 A, V
= 0.8 A,
= 0.8 A,
Test conditions
Test conditions
Test conditions
= 300 V, I
= 20 V
= 20V, Tj = 150 °C
GS
D
GS
= 0.4 A,
=0
= 10 V
Electrical characteristics
Min.
Min
Min.
30
Typ.
Typ.
5.5
135
216
140
224
Typ.
13
28
3.2
3.2
5
Max.
Max
Max.
0.8
2.4
1.6
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V
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