STU8NM50N STMicroelectronics, STU8NM50N Datasheet - Page 4

• Manufacturer Part Number: STU8NM50N
• Description: N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in IPAK
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 5.
Table 6.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
Table 7.
C
Symbol
V
Symbol
Symbol
C
R
V
oss(eq)
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
DS(on)
C
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
t
t
oss
r
f
rss
iss
gs
gd
G
g
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
(V
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
GS
= 0)
Parameter
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 17413 Rev 5
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA
= 500 V
= 500 V, T
= 50 V, f = 1 MHz,
= 0
= 0 to 50 V, V
= 10 V
= V
= 400 V, I
= ± 25 V
= 10 V, I
Figure
V
R
(see
DD
G
Test conditions
Test conditions
GS
= 4.7 Ω, V
= 250 V, I
Figure
, I
Test conditions
16)
D
D
D
= 250 µA
C
= 2.5 A
= 5 A,
STD8NM50N, STP8NM50N, STU8NM50N
= 125 °C
15)
GS
D
GS
= 0
= 5 A,
= 10 V
Min.
Min.
500
2
-
-
-
-
Min.
-
147.5
Typ.
Typ.
0.73
364
1.2
5.4
33
14
Typ.
3
7
3
4.4
8.8
25
7
oss
Max.
Max.
when V
0.79
100
100
Max
1
4
-
-
-
-
-
DS
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
Ω
Ω