STU8NM50N STMicroelectronics, STU8NM50N Datasheet - Page 5

• Manufacturer Part Number: STU8NM50N
• Description: N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in IPAK
• Manufacturer: STMicroelectronics

STD8NM50N, STP8NM50N, STU8NM50N
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17413 Rev 5
I
I
V
I
V
(see
SD
SD
SD
DD
DD
= 5 A, V
= 5 A, di/dt = 100 A/µs
= 5 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
GS
20)
j
= 150 °C
= 0
Figure
20)
Electrical characteristics
Min.
-
-
-
-
Typ.
187
224
1.3
1.5
14
13
Max. Unit
1.5
20
5
µC
µC
5/19
ns
ns
A
A
V
A
A