STW24NM60N STMicroelectronics, STW24NM60N Datasheet - Page 3

• Manufacturer Part Number: STW24NM60N
• Description: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247
• Manufacturer: STMicroelectronics

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
R
R
Symbol
dv/dt
I
thj-case
thj-amb
E
DM
P
V
SD
I
V
T
T
AR
T
AS
I
I
TOT
ISO
GS
stg
D
D
J
J
(2)
(3)
≤ 17 A, di/dt ≤ 400 A/µs, peak V
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-case
max.
Thermal resistance junction-ambient
max.
Maximum lead temperature for
soldering purpose
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
J
=25 °C)
= 25 °C, I
Parameter
Parameter
D
Parameter
Doc ID 18047 Rev 3
C
= I
= 25 °C
AR
DS
, V
≤ V
DD
(BR)DSS
C
C
J
= 25 °C
= 100 °C
= 50 V)
max)
, V
TO-220FP
DD
= 80% V
4
(BR)DSS
62.5
I
2
PAK
TO-220
TO-247
I
2
Value
125
PAK
300
17
11
68
Value
300
-55 to 150
TO-220
6
Value
± 30
15
1
TO-220FP
Electrical ratings
17
11
68
2500
30
TO-247
(1)
(1)
(1)
50
Unit
V/ns
°C/W
°C/W
Unit
°C
Unit
W
V
A
A
A
V
°C
mJ
A
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