STW24NM60N STMicroelectronics, STW24NM60N Datasheet - Page 5

• Manufacturer Part Number: STW24NM60N
• Description: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247
• Manufacturer: STMicroelectronics

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
t
RRM
RRM
I
t
Q
Q
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18047 Rev 3
V
R
(see Figure 18)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 17 A, V
= 17 A, di/dt = 100 A/µs
= 17 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
J
GS
GS
D
= 150 °C
= 8.5 A,
= 0
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
11.5
16.5
73
37
340
404
4.6
5.7
27
28
Max Unit
1.6
17
68
-
µC
µC
ns
ns
ns
ns
ns
ns
5/19
A
A
V
A
A