AP1203GM Advanced Power Electronics Corp., AP1203GM Datasheet - Page 3

• Manufacturer Part Number: AP1203GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1203GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Qg (nc): 6
• Qgs (nc): 1.7
• Qgd (nc): 3.4
• Id(a): 11.2
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

50
40
30
20
10
20
18
16
14
12
10
30
25
20
15
10
0
8
5
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
Reverse Diode
1
V
V
V
DS
SD
0.4
4
GS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
j
=150
2
o
C
T
0.8
6
A
T
= 25
I
A
D
3
=25
= 6 A
o
C
℃
T
j
1.2
=25
8
V
4
o
G
C
=4.0V
9.0V
8.0V
7.0V
10V
1.6
5
10
1.9
1.4
0.9
0.4
50
40
30
20
10
1.6
1.2
0.8
0.4
0.0
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 10 A
=10V
v.s. Junction Temperature
Junction Temperature
V
1
T
DS
T
j
0
0
, Junction Temperature (
j
T
, Drain-to-Source Voltage (V)
, Junction Temperature (
A
= 150
2
o
C
50
50
3
AP1203GM
o
100
100
C)
o
C)
4
V
G
=4.0V
6.0V
8.0V
7.0V
10V
150
150
5
3