AP1203GM Advanced Power Electronics Corp., AP1203GM Datasheet - Page 4

• Manufacturer Part Number: AP1203GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1203GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Qg (nc): 6
• Qgs (nc): 1.7
• Qgd (nc): 3.4
• Id(a): 11.2
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP1203GM
0.01
100
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
I
T
D
V
90%
10%
V
A
= 10 A
DS
GS
=25
V
2
o
DS
Q
C
0.1
V
t
G
, Drain-to-Source Voltage (V)
V
d(on)
DS
V
, Total Gate Charge (nC)
DS
= 15 V
DS
= 18 V
t
= 24 V
4
r
1
6
t
d(off)
10
8
t
f
100ms
100us
10ms
1ms
DC
1s
100
10
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
800
600
400
200
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
0.02
0.01
V
Duty factor=0.5
0.1
0.05
Single Pulse
0.2
G
0.001
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
=125
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
1000
29
4