AP2533GY-HF Advanced Power Electronics Corp., AP2533GY-HF Datasheet

Advanced Power MOSFETs utilized advanced processing  techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2533GY-HF

Manufacturer Part Number
AP2533GY-HF
Description
Advanced Power MOSFETs utilized advanced processing  techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2533GY-HF

Vds
16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@10v
150
Rds(on) / Max(m?) Vgs@4.5v
230
Rds(on) / Max(m?) Vgs@2.5v
450
Qg (nc)
6.5
Qgs (nc)
0.5
Qgd (nc)
1.5
Id(a)
2.2
Pd(w)
1.14
Configuration
Complementary N-P
Package
OT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2533GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Fast Switching Performance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount
applications.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
SOT-26
3
3
D1
S1
D2
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
16
+8
2.2
1.8
8.0
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
1.14
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
AP2533GY-HF
Value
-1.5
-1.2
-6.0
110
-16
+8
S1
D1
G2
150mΩ
320mΩ
201008171
-1.5A
-16V
2.2A
Units
℃/W
16V
Unit
W
V
V
A
A
A
D2
S2
1

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AP2533GY-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 G1 N-channel Parameter 3 AP2533GY-HF Halogen-Free Product N-CH BV 16V DSS R 150mΩ DS(ON) I 2.2A D P-CH BV -16V DSS R 320mΩ DS(ON) I -1. ...

Page 2

... AP2533GY-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... =-5V =-12V =+8V =- =-10V DS V =-4. =-10V =3.3Ω =- = =-16V DS f=1.0MHz Test Conditions 2 I =-0.9A AP2533GY-HF Min. Typ. =-250uA -16 - =-1. =- =-0. =-250uA -0.2 - =-1A - 3 5.5 - 0 410 - Min ...

Page 4

... AP2533GY-HF N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP2533GY-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.01 T Single Pulse ...

Page 6

... AP2533GY-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 220 200 180 160 140 120 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage 4.0 3 =150 C j 2.0 1.0 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP2533GY-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. 0.2 T Single Pulse Duty factor = t/T Peak ...

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