AP2533GY-HF Advanced Power Electronics Corp., AP2533GY-HF Datasheet - Page 2

• Manufacturer Part Number: AP2533GY-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2533GY-HF

• Vds: 16V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@10v: 150
• Rds(on) / Max(m?) Vgs@4.5v: 230
• Rds(on) / Max(m?) Vgs@2.5v: 450
• Qg (nc): 6.5
• Qgs (nc): 0.5
• Qgd (nc): 1.5
• Id(a): 2.2
• Pd(w): 1.14
• Configuration: Complementary N-P
• Package: OT-26

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
N-CH Electrical Characteristics@T
Source-Drain Diode
AP2533GY-HF
DSS
GSS
d(on)
r
d(off)
f
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Parameter
Parameter
2
2
2
j
2
=25
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
I
D
D
S
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
GS
DS
G
=2A
=1A
=0.9A, V
o
=3.3Ω
C(unless otherwise specified)
=V
=5V, I
=12V, V
=10V
=10V
=16V
=0V, I
=4.5V, I
=2.5V, I
=1.8V, I
=+8V, V
=4.5V
=5V
=0V
GS
Test Conditions
Test Conditions
, I
D
D
GS
D
=250uA
=2A
D
D
D
=250uA
GS
DS
=0V
=2A
=1.5A
=0.5A
=0V
=0V
Min.
Min.
0.2
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
350
6.5
0.5
1.5
15
18
70
60
8
8
4
-
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
10.4
150
230
450
560
1.2
1
1
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
mΩ
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
2