AP4438GM-HF Advanced Power Electronics Corp., AP4438GM-HF Datasheet - Page 3

• Manufacturer Part Number: AP4438GM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4438GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 11.5
• Rds(on) / Max(m?) Vgs@4.5v: 20
• Qg (nc): 7.5
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 11.8
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

50
40
30
20
10
16
14
12
10
12
10
0
8
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
V
V
DS
1
4
GS
SD
, Drain-to-Source Voltage (V)
T
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
A
T
= 25
j
=150
o
C
0.6
2
6
o
C
T
I
A
D
=25
= 7 A
0.8
℃
3
8
T
V
j
G
=25
1
=4.0V
7.0 V
6.0 V
5.0 V
10 V
o
C
1.2
4
10
1.9
1.4
0.9
0.4
50
40
30
20
10
1.6
1.2
0.8
0.4
0.0
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 11A
=10V
1
v.s. Junction Temperature
Junction Temperature
V
DS
T
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
T
2
A
= 150
3
o
50
50
AP4438GM-HF
C
4
100
100
o
o
C)
C)
V
G
5
=4.0V
7.0 V
6.0 V
5.0 V
10 V
150
150
6
3