AP4438GM-HF Advanced Power Electronics Corp., AP4438GM-HF Datasheet - Page 4

• Manufacturer Part Number: AP4438GM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4438GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 11.5
• Rds(on) / Max(m?) Vgs@4.5v: 20
• Qg (nc): 7.5
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 11.8
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP4438GM-HF
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
Operation in this area
V
limited by R
T
I
V
90%
10%
V
D
DS
A
DS
= 11 A
=25
GS
= 15 V
DS(ON)
V
o
4
DS
C
Q
0.1
t
G
, Drain-to-Source Voltage (V)
d(on)
, Total Gate Charge (nC)
t
8
r
1
12
t
d(off)
10
16
t
f
100ms
100us
10ms
1ms
DC
1s
100
20
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
800
600
400
200
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
0.01
V
Duty factor=0.5
Single Pulse
0.02
0.05
0.1
0.2
G
0.001
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
=125
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
1000
29
4