AP4955GM Advanced Power Electronics Corp., AP4955GM Datasheet - Page 4

• Manufacturer Part Number: AP4955GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, lower on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4955GM

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Rds(on) / Max(m?) Vgs@2.5v: 65
• Qg (nc): 19
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): -5.6
• Pd(w): 2
• Configuration: Dual P
• Package: SO-8

AP4955GM
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Operation in this area
10%
90%
V
I
V
limited by R
V
D
Single Pulse
DS
GS
T
=-5A
DS
A
=-16V
=25
-V
DS(ON)
10
DS
Q
o
0.1
t
C
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
20
r
1
30
t
d(off)
10
40
t
f
100ms
10ms
1ms
DC
1s
100
50
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
100
0.01
0.1
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.001
G
Duty factor=0.5
5
0.01
0.02
0.05
0.2
0.1
Single Pulse
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
13
0.1
Q
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
C
C
C
Q
a
iss
rss
oss
1000
29
4