AP9926GEM Advanced Power Electronics Corp., AP9926GEM Datasheet
AP9926GEM
Specifications of AP9926GEM
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AP9926GEM Summary of contents
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... Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP9926GEM Pb Free Plating Product BV 20V DSS R 30mΩ DS(ON Rating Units 20 ±12 6 4.8 20 ...
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... AP9926GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... GS Fig 3. On-Resistance v.s. Gate Voltage 24 4. 4.0V 3.5V 3. =2. 2.5 Fig 2. Typical Output Characteristics 1 1.5 1.2 0.9 0 -50 Fig 4. Normalized On-Resistance AP9926GEM o =150 C V 0 Drain-to-Source Voltage (V) DS =6A =4. 100 Junction Temperature ( C) j v.s. Junction Temperature 4.5V 4.0V 3.5V 3.0V 2.5V =2.0V GS 2.5 150 ...
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... AP9926GEM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 1ms 0.1 10ms 100ms 1s 0.01 10s DC 10 100 0.001 Fig 8. Effective Transient Thermal Impedance 2 ...
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... 0.1 0.01 0 0.4 0.8 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics 1.5 1 0.9 0.6 0.3 -50 1.2 1.6 Fig 12. Gate Threshold Voltage v.s. AP9926GEM f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 29 150 ...
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... AP9926GEM Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit 90 THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE 5V RATED d(off) d(on) r Fig 14. Switching Time Waveform ...