AP9926GEM Advanced Power Electronics Corp., AP9926GEM Datasheet - Page 2

• Manufacturer Part Number: AP9926GEM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9926GEM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 12.5
• Qgs (nc): 1
• Qgd (nc): 6.5
• Id(a): 6
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Notes:
AP9926GEM
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Continuous Source Current ( Body Diode )
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
G
D
=6A
=1A
=25℃,I
=V
=3.3Ω,V
=10Ω
=0V, I
=4.5V, I
=2.5V, I
=V
=10V, I
=20V, V
=20V ,V
= ±10V
=20V
=5V
=10V
=0V
=20V
G
GS
=0V,V
Test Conditions
Test Conditions
, I
S
D
=1.7A,V
D
=250uA
D
D
D
=250uA
GS
GS
GS
=6A
=6A
=5.2A
S
=0V
=0V
=5V
=1.2V
GS
D
=0V
=1mA
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
15.6
12.5
26.2
Typ.
355
190
0.1
6.5
6.8
85
1
5
9
-
-
-
-
-
-
-
-
-
Max. Units
Max. Units
1.67
±10
1.2
30
45
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
uA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V