AP9410GMT-HF Advanced Power Electronics Corp., AP9410GMT-HF Datasheet - Page 3

• Manufacturer Part Number: AP9410GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9410GMT-HF

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 5.5
• Qg (nc): 28
• Qgs (nc): 3
• Qgd (nc): 12
• Id(a): 80
• Pd(w): 56.8
• Configuration: Single N
• Package: PMPAK 5x6

160
120
80
40
10
40
30
20
10
0
8
6
4
2
0
0
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
Reverse Diode
V
DS
V
GS
T
0.4
4
2
SD
, Drain-to-Source Voltage (V)
T
j
, Gate-to-Source Voltage (V)
=150
C
, Source-to-Drain Voltage (V)
=25
o
o
C
C
0.8
8
3
I
T
D
C
=20A
=25
T
j
=25
o
C
1.2
12
4
o
C
V
G
= 2.0 V
5.0V
4.5V
3.5V
2.5V
1.6
16
5
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
120
100
80
60
40
20
0
-50
Fig 4. Normalized On-Resistance
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=20A
=4.5V
v.s. Junction Temperature
Junction Temperature
V
2
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
T
4
C
=150
AP9410GMT-HF
50
50
o
C
6
100
100
o
o
C)
V
8
C)
G
=2.0V
5.0V
4.5V
3.5V
2.5V
150
10
150
3