AP9410GMT-HF Advanced Power Electronics Corp., AP9410GMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP9410GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9410GMT-HF

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 5.5
• Qg (nc): 28
• Qgs (nc): 3
• Qgd (nc): 12
• Id(a): 80
• Pd(w): 56.8
• Configuration: Single N
• Package: PMPAK 5x6

AP9410GMT-HF
1000
100
10
8
6
4
2
0
1
0.01
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
90%
I
V
Operation in this
area limited by
V
D
Single Pulse
GS
T
=20A
R
DS
DS(ON)
C
=25
V
10
Q
DS
o
0.1
t
V
G
C
d(on)
,Drain-to-Source Voltage (V)
V
DS
, Total Gate Charge (nC)
V
DS
=15V
DS
=18V
t
20
r
=24V
1
30
t
d(off)
10
40
t
f
100ms
100us
10ms
1ms
DC
50
100
Fig 10. Effective Transient Thermal Impedance
3200
2400
1600
0.001
800
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.01
0.02
V
Duty factor = 0.5
0.05
Single Pulse
0.1
0.2
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= PDM x R
t
T
f=1.0MHz
1
25
thjc
Q
C
C
C
+ T
c
iss
oss
rss
10
29
4