AP1333GU Advanced Power Electronics Corp., AP1333GU Datasheet - Page 3

• Manufacturer Part Number: AP1333GU
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1333GU

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 600
• Rds(on) / Max(m?) Vgs@4.5v: 800
• Rds(on) / Max(m?) Vgs@2.5v: 1000
• Qg (nc): 1.7
• Qgs (nc): 0.3
• Qgd (nc): 0.4
• Id(a): -0.55
• Pd(w): 0.35
• Configuration: Single P
• Package: SOT-323

1200
1000
2.5
2.0
1.5
1.0
0.5
0.0
800
600
400
200
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
=25
0.2
-V
-V
0.5
-V
2
o
Reverse Diode
GS
DS
C
SD
T
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
=150
0.4
1.0
4
o
C
0.6
I
T
1.5
6
D
A
= - 0. 3 A
=25
0.8
o
C
V
T
2.0
G
8
j
= - 2.0V
1
=25
- 5.0V
- 4.5V
- 3.5V
- 2.5V
o
C
1.2
2.5
10
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
= - 0. 5 A
A
= - 4.5V
= 150
v.s. Junction Temperature
Junction Temperature
0.5
-V
T
T
DS
j
o
0
0
, Junction Temperature (
j
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
1.0
50
50
1.5
AP1333GU
100
o
100
V
C)
o
2.0
G
C)
= - 2.0V
-5.0V
-4.5V
-3.5V
-2.5V
2.5
150
150
3